copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 1 /5 samwin features high ruggedness r ds( on ) (max 1.8 ? )@v gs =10v gate charge (typical 50 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply. n - channel mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 900 v i d continuous drain current (@t c =25 o c) 7.0 * a continuous drain current (@t c =100 o c) 4.4 * a i dm drain current pulsed (note 1) 28 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 580 mj e ar repetitive avalanche energy (note 1) 72 mj dv/dt peak diode recovery dv/dt (note 3) 2 v/ns p d total power dissipation (@t c =25 o c) 390 w derating factor above 25 o c 3.1 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit r thjc thermal resistance, junction to case 0.32 o c/w r thcs thermal resistance, case to sink 0.5 o c/w r thja thermal resistance, junction to ambient 50 o c /w *. drain current is limited by junction temperature. bv dss : 900v i d : 7.0a r ds(on) : 1.8ohm 1. gate 2. drain 3. source SW7N90 1 2 3 order codes item sales type marking package packaging 1 sw w 7n90 SW7N90 to - 3p tube free datasheet http://
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 2 /5 samwin electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 900 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.85 - v/ o c i dss drain to source leakage current v ds =900v, v gs =0v - - 10 ua v ds =720v, t c =125 o c - - 100 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - - - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 3.0 - 5.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 3.5a - 1.1 1.8 ? g fs forward transconductance vds = 40 v, id = 3.5a 2 - - s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz - 1440 1880 pf c oss output capacitance - 140 185 c rss reverse transfer capacitance - 17 23 t d(on) turn on delay time v ds =450v, i d =7a, r g =25 ? (note 4 5) - 33 80 ns tr rising time - 35 100 t d(off) turn off delay time - 130 200 t f fall time - 38 100 q g total gate charge vds=720v, vgs=10v,id=7a (note 4 5) - 50 80 nc q gs gate - source charge - 11 - q gd gate - drain charge - 23 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 7 a i sm pulsed source current - - 25.6 a v sd diode forward voltage drop. i s =7a, v gs =0v - - 1.5 v t rr reverse recovery time i s =7a, v gs =0v, di f /dt=100a/us - 400 - ns q rr breakdown voltage charge - 3.8 - uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 23.6mh, i as = 7a, v dd = 50v, r g =25 ?, starting t j = 25 o c 3. i sd 7a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. SW7N90 free datasheet http://
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 3 /5 samwin fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics SW7N90 0 2 4 6 8 10 12 0 10 20 30 40 50 60 vgs, gate source voltage(v) qg, total gate charge (nc) vds=720v notes: 1. 250s pulse test 2. t=25 3. vgs 2~10v step=1v vgs=20v vgs=10v fig. 6. on resistance variation vs. junction temperature fig 5. breakdown voltage variation vs. junction temperature fig. 4. on state current vs. diode forward voltage 0 0.5 1 1.5 2 2.5 3 -70 -45 -20 5 30 55 80 105 130 155 180 rdson, (normalized drain - source on resistance tj junction temperture 0.8 0.9 1 1.1 1.2 -70 -45 -20 5 30 55 80 105 130 155 180 bvdss, (normalized drain - source breakdown voltage tj junction temperture 150 25 free datasheet http://
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 4 /5 samwin SW7N90 fig. 7 . maximum safe operating area fig. 8 . transient thermal response curve v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 9 . gate charge test circuit & waveform fig. 10 . switching time test circuit & waveform v ds same type as dut dut v gs 5ma q g q gs q gd v gs charge nc 10v free datasheet http://
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 5 /5 samwin fig. 11 . unclamped inductive switching test circuit & waveform SW7N90 fig. 12 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd free datasheet http://
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